Charge carrier motion and effect of fixed oxide charge in a microstructured silicon radiation detector

Signal formation in a microstructured semiconductor neutron detector is more complex than planar diode geometry. Three-dimensional microstructures are laterally smaller the ionization cloud length, and electric fields may be weak enough to exhibit plasma time effects. This work first detailed treatment of charge carrier motion these devices replicate profile signal magnitude. Simulations were performed using COMSOL Multiphysics investigate various parameters that affect propagation cloud. It was observed size simulated three-dimensional structure had an impact on induced current pulse, indicating importance simulation geometry optimization accurately simulate expansion. used accurate creation profiles energy deposition information imported from radiation transport codes. A methodology presented benchmark preamplifier event pulses along with complexities modeling etched trenches Si–SiO 2 boundary conditions, including fixed oxide interface trapping.